Silicon dioxide (SiO2) solid blocking layer on through-glass via surface for efficient highly selective copper filling > International Journal | 한양대 나노소재 및 시스템 연구실(nmsl)

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Electrochemical Nano-Materials and System Lab

International Journal

Surfaces and Interfaces 2024

Silicon dioxide (SiO2) solid blocking layer on through-glass via surface for efficient highly selective copper filling

Fan Yang; Qing Wang; Jinhyun Lee; Yunha Song; Inseong Hwang; Sanghwa Yoon; Bongyoung Yoo

관리자 · 조회 583 · 2025-02-03

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이전글 Wet-chemical deposition of metals for advanced semiconductor technology nodes: Rh3+solution stability and Rh electrodeposition 다음글 Potential difference-induced electrodeposition of defect-rich α-cobalt hydroxide on porous copper (PCu): High-voltage performance of supercapacitor