People

Electrochemical Nano-Materials and System Lab

Professor

유봉영 교수

Bongyoung Yoo 유봉영

Professor

Hanyang University Division of Materials and Chemical Engineering

History
  • 2018 – PresentProfessor, Hanyang University
  • 2013 – 2018Associate Professor, Hanyang University
  • 2008 – 2013Assistant Professor, Hanyang University
  • 2004 – 2008Post Doc. Lecturer and Laboratory manager, UC Riverside
  • 2003 – 2004Research Staff, UCLA
  • 2000 – 2003Graduate Research Assistant, UCLA
  • 1994 – 1999Process Engineer, SAMSUNG Electronics
Education
  • Oct. 1999 – Sep. 2003
    University of California at Los AngelesPh.D. from Materials Science and EngineeringThesis : Electrodeposition of Iron Group – Vanadium Magnetic Thin Films
  • Mar. 1990 – Feb. 1992
    Yonsei University, Graduate School, Seoul, KoreaMaster of Science from Metallurgical EngineeringThesis : CO2 Laser Beam Absorptance Measurement on Steel Surface by Two Dimensional F.D.M.
  • Mar. 1986 – Feb. 1990
    Yonsei University, Seoul, KoreaBachelor of Science from Metallurgical Engineering
Honor and recognitions
  • 1999
    Samsung Technology AwardDevelopment of Cu Interconnection Process
  • 2003
    Electrochemical Society Student Grant
Work Experience
Division of Materials and Chemical Engineering, Hanyang University

Mar. 2008 – Present · Professor

Electrochemical Nanostructure Engineering and Materials Processing

Department of Environmental and Chemical Engineering, UC Riverside

Sep. 2004 – Jan. 2008 · Post Doctoral Researcher, Lecturer, and Laboratory Manager of Dr. Myung Lab.

  • Development of nanoengineered materials with electrochemistry
    • Metal-CNT nanocomposite films
    • Nanoparticles-CNT hybrid nanostructures
    • Segmented nanowires (i.e. magnetic/conducting polymer/magnetic, magnetic/semiconductor/magnetic)
    • Semiconducting nanowires (e.g. CdTe)
    • Thermoelectric nanowires (e.g. BiTe, BiSbTe)
    • Zero-valent iron (ZVI) nanoparticles
  • Development of nanosensor array
    • Pd and FePd nanowire based H2 sensor
    • Conducting polymer coated SWNTs based CO2 and NH3 sensor
    • Single conducting polymer nanowire based bio/chemical sensor
  • Development of alumina nanotemplate
    • Three-dimensional alumina nanotemplate
  • Magneto-transport studies of 1-D nanostructure
    • Magnetic assembling of nanostructures
    • Fabrication of SWNT based spintronics devices
    • Domain wall movement within ferromagnetic nanowire with artificial defects
    • Magnetoresistance of ferromagnetic nanowire
    • FePd shape memory nanowires
  • Development of thermoelectric power generator and cooler
    • Electrodeposition of BiTe and BiSbTe thin films, nanowires, and superlattice structures
    • Electrodeposition of PbTe thin films and nanowires
    • Electrodeposition of single crystalline PbTe nanocrystals
  • Development of Zero-Valence-Iron nanoparticles for heavy metal remediation
    • Cr(VI), As(V) remediation using ZVI nanoparticles
  • Supervising the graduate students and under-graduate students for research
Department of Chemical Engineering, UCLA

Sep. 2003 – Aug. 2004 · Research Staff

  • Shock-resistive MEMS Magnetometer Project – DARPA Program
  • XYZ Frequency Selective Surface on Chip Project – NSF Program
  • Development of Hard Magnetic Iron group-Rare earth Thin Films with Electrodeposition
  • Development of Conducting Nanowire with Electrochemical Method
Department of Chemical Engineering, UCLA

Aug. 2000 – Sep. 2003 · Graduate Research Assistant

  • MEMS Magnetometer Project – DARPA Program
  • XYZ Frequency Selective Surface on Chip Project – NSF Program
  • Development of low stress CoNi magnetic thin film
  • Electrodeposited Co/Cu thin film multilayer for GMR
  • Development high saturation magnetization CoFeV electrodeposited thin film
SAMSUNG Electronics Co., Ltd.

Jan. 1994 – Aug. 1999 · Process Engineer, Process Development Team 3, Semiconductor R&D Center

Cu Interconnection Process Development for LOGIC DeviceCu Task Force Member · Apr. 1998 – Aug. 1999
  • Module process integration for ECD Cu interconnection
  • IMP Ta/TaN barrier process for Cu metallization
  • IMP Cu process for the seed layer of electroplating Cu
  • MOCVD Cu process for VIA fill and seed process
Advanced Interconnection Process Development for DRAMJan. 1996 – Apr. 1998
  • Process development of metal bit-line at COB structure for 256M, 1G, 4G DRAM and MDL (merged DRAM in Logic)
  • Technology development of barrier metal with Ionized Metal Plasma (IMP) PVD for deep sub-micron contacts (Joint Evaluation with Applied Materials Inc., USA)
  • RTP technology development for BEOL process
  • Study of physical and electrical phenomena at Si/metal-silicide interface for low contact resistance
SiH2Cl2 (DCS)-Tungsten Silicide Process & Hardware Development1995 – Jan. 1996
  • Joint Development Project with Genus Inc. (USA) for DCS-based WSi2 process and development of LPCVD System
  • Process development for the bit line of 4M Fast SRAM process development for the gate and bit lines of 16M and 64M DRAM
TiSix/Poly-Si (Ti-polycide) Gate Line Process DevelopmentJan. 1994 – Feb. 1995
  • Process development of Ti-silicide gate structure for advanced DRAM
  • Evaluation of gate oxide reliability
  • Thermal stability of Ti-silicide gate line
Publications
  • Syed Mubeen, Ting Zhang, Bongyoung Yoo, Marc A. Deshusses, and Nosang V. Myung (2007)Palladium Nanoparticles Decorated Single-Walled Carbon Nanotube Hydrogen SensorJournal of Physical Chemistry C, 111, 6321-6327
  • Bongyoung Yoo, Feng Xiao, Krassimir N. Bozhilov, Jennifer Herman, Margaret A. Ryan, and Nosang V. Myung (2007)Electrodeposition of Thermoelectric Superlattice NanowiresAdvanced Materials, 19, 29
  • Yi-Chia Chou, Wen-Wei Wu, Shao-Liang Cheng, Bong-Young Yoo, Nosang Myung, Lih J. Chen, and K. N. Tu (2008)In-situ TEM Observation of Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 in Nanowires of SiNano Letters, 8 (8), 2194-2199