Through-Silicon-Via(TSV) Filling by Electrodeposition of Cu with Pulse Current at Ultra-Short Duty Cycle > International Journal | 한양대 나노소재 및 시스템 연구실(nmsl)

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Electrochemical Nano-Materials and System Lab

International Journal

Journal of The Electrochemical Society 2015~

Through-Silicon-Via(TSV) Filling by Electrodeposition of Cu with Pulse Current at Ultra-Short Duty Cycle

Sanghyun Jin, Geon Wang, Bongyoung Yoo

관리자 · 조회 1,090 · 2013-12-26

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이전글 Manipulation of cuprous oxide surfaces for improving their photocatalytic activity 다음글 Spalling of Thin Si Layer by Electrodeposit-Assisted Stripping