Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current > International Journal | 한양대 나노소재 및 시스템 연구실(nmsl)

Research

Electrochemical Nano-Materials and System Lab

International Journal

Microelectronic Engineering 2016 submitted

Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current

Sanghyun Jin,Sungho Seo;,angwoo Park,Bongyoung Yoo

관리자 · 조회 300 · 2017-12-20

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이전글 Electrodeposition of Nanotwin Cu by Pulse Current for Through-Si-Via (TSV) Process 다음글 Electrodeposition of Chalcogenide ZnSe Thin Films with Tailored Compositions in Alkaline Aqueous Citrate Solutions