◆ Division of Materials and Chemical Engineering, Hanyang University
Mar. 2008 – present
Professor
Electrochemical Nanostructure Engineering and Materials Processing
◆ Department of Environmental and Chemical Engineering, UC Riverside
Sep. 2004 – Jan. 2008
Post Doctoral Researcher, Lecturer, and Laboratory manager of Dr. Myung Lab.
- Development of nanoengineered materials with electrochemistry
Metal-CNT nanocomposite films
Nanoparticles-CNT hybrid nanostructures
Segmented nanowires (i.e. magnetic/conducting polymer/magnetic, magnetic/semiconductor/magnetic)
Semiconducting nanowires (e.g. CdTe)
Thermoelectric nanowires (e.g. BiTe, BiSbTe)
Zero-valent iron (ZVI) nanoparticles
- Development of nanosensor array
Pd and FePd nanowire based H2 sensor
Conducting polymer coated SWNTs based CO2 and NH3 sensor
Single conducting polymer nanowire based bio/chemical sensor
- Development of alumina nanotemplate
Three-dimensional alumina nanotemplate
- Magneto-transport studies of 1-D nanosturcture
Magnetic assembling of nanostructures
Fabrication of SWNT based spintronics devices
Domain wall movement within ferromagnetic nanowire with artificial defects
Magnetoresistance of ferromagnetic nanowire
FePd shape memory nanowires
- Development of thermoelectric power generator and cooler
Electrodeposition of BiTe and BiSbTe thin films, nanowires, and superlattice structures
Electrodeposition of PbTe thin films and nanowires
Electrodeposition of single crystalline PbTe nanocrystals
- Development of Zero-Valence-Iron nanoparticles for heavy metal remediation
Cr(VI), As(V) remediation using ZVI nanoparticles
- Supervising the graduate students and under-graduate students for research
◆ Department of Chemical Engineering, UCLA
Sep. 2003 – Aug. 2004
Research Staff
- Shock-resistive MEMS Magnetometer Project – DARPA Program
- XYZ Frequency Selective Surface on Chip Project – NSF Program
- Development of Hard Magnetic Iron group-Rare earth Thin Films with Electrodeposition
- Development of Conducting Nanowire with Electrochemical Method
◆ Department of Chemical Engineering, UCLA
Aug. 2000 – Sep. 2003
Graduate Research Assistant
-MEMS Magnetometer Project – DARPA Program
-XYZ Frequency Selective Surface on Chip Project – NSF Program
-Development of low stress CoNi magnetic thin film
-Electrodeposited Co/Cu thin film multilayer for GMR
-Development high saturation magnetization CoFeV electrodeposited thin film
◆ SAMSUNG Electronics Co., Ltd.,
Jan. 1994 - Aug. 1999
Process engineer, Process Development Team 3, Semiconductor R&D Center
Cu Interconnection Process Development for LOGIC Device:
Cu Task Force Member Apr. 1998 – Aug. 1999
- Module process integration for ECD Cu interconnection
- IMP Ta/TaN barrier process for Cu metallization
- IMP Cu process for the seed layer of electroplating Cu
- MOCVD Cu process for VIA fill and seed process
Advanced Interconnection Process Development for DRAM Jan. 1996 – Apr. 1998
- Process development of metal bit-line at COB structure for 256M, 1G, 4G DRAM and MDL(merged DRAM in Logic )
-Technology development of barrier metal with Ionized Metal Plasma (IMP) PVD for deep sub-micron contacts (Joint Evaluation with Applied Materials Inc., USA)
- RTP technology development for BEOL process
- Study of physical and electrical phenomena at Si/metal-silicide interface for low contact resistance
SiH2Cl2 (DCS)-Tungsten Silicide Process & Hardware Development. 1995 – Jan. 1996
- Joint Development Project with Genus Inc.(USA) for DCS- based WSi2 process and development of LPCVD System
- Process development for the dit dine of 4 M Fast SRAM process development for the gate and bit lines of 16 and 64 M DRAM
TiSix/Poly-Si (Ti-polycide) Gate Line Process Development Jan. 1994 - Feb. 1995
- Process development of Ti-silicide gate structure for advanced DRAM
- Evaluation of gate oxide reliability
- Thermal stability of Ti-silicide gate line
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